It was demonstrated that the LOPA-based DLW technique induced a local and temporal thermal effect thanks to the use of a continuous-wave laser. This optically induced thermal effect immediately completes the crosslinking process at photopolymerized region of negative photoresist, allowing obtain desired structures without using the conventional post-exposure bake (PEB) step. Therefore, LOPA-based DLW technique combined with local PEB shows great advantages over the traditional PEB, such as simple, short fabrication time, high resolution. In particular, it allowed overcoming the accumulation effect inherently existed in optical lithography by one-photon absorption process, resulting in small and uniform structures with very short lattice constant.